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| CM600HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMODTM HVIGBT 600 Amperes/4500 Volts A D L S Y N L V NUTS (4 TYP) P F CM C C G E B E E Q C E G R T U NUTS (3 TYP) J K M H W (6 TYP) X C Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking C C C G E E E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 5.12 5.51 1.50 4.48 4.880.01 1.57 0.79 0.41 0.42 1.92 2.240.01 1.71 Millimeters 130.0 140.0 38.0 114.0 124.00.25 40.0 20.0 10.35 10.65 48.8 57.00.25 43.5 Dimensions N P Q R S T U V W X Y Inches 2.42 0.59 1.57 0.20 1.16 1.10 M4 Metric M8 Metric 0.28 Dia. 0.20 0.71 Millimeters 61.5 15.0 40.0 5.2 29.5 28.0 M4 M8 Dia. 7.0 5.0 18.0 Applications: Traction Medium Voltage Drives High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HB-90H is a 4500V (VCES), 600 Ampere Single IGBTMODTM Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 90 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HB-90H Single IGBTMODTM HVIGBT 600 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V) Gate-Emitter Voltage (VCE = 0V) Collector Current (Tc = 25C) Peak Collector Current (Pulse) Diode Forward Current** (Tc = 25C) Diode Forward Surge Current** (Pulse) Maximum Collector Dissipation (Tc = 25C, IGBT Part, Tj 125C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 Auxiliary Terminal Screws Module Weight (Typical) Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM PC - - - - Viso CM600HB-90H -40 to 150 -40 to 125 4500 20 600 1200* 600 1200* 6700 115 53 17 1.5 6000 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb kg Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25C IC = 600A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 2250V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 3.0 3.3 5.4 4.0 Max. 12.0 0.5 7.5 3.9* - - 5.2 Units mA A Volts Volts Volts C Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HB-90H Single IGBTMODTM HVIGBT 600 Amperes/4500 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 2250V, IC = 600A, VGE1 = VGE2 = 15V, RG = 15 Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/s IE =600A, diE/dt = -1200A/s VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. 108 8.0 2.4 - - - - - 240* Max. - - - 2.4 2.4 6.0 1.2 1.8 - Units nF nF nF s s s s Diode Reverse Recovery Time** Diode Reverse Recovery Charge** s C * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Case to Fin Symbol Rth(j-c) Q Rth(j-c) D Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.010 Max. 0.015 0.030 - Units K/W K/W K/W 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HB-90H Single IGBTMODTM HVIGBT 600 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 6 VGE = 15V Tj = 25C Tj = 125C 1.2 1.0 0.8 0.6 0.4 0.2 0 10-3 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.015 K/W COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 4 3 2 1 0 0 5 4 3 2 1 0 Tj = 25C Tj = 125C 500 1000 1500 0 500 1000 1500 10-2 TIME, (s) 10-1 100 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.2 TURN-ON SWITCHING ENERGY, Eon, (J/P) 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 COLLECTOR CURRENT, IC, (AMPERES) 3.0 TURN-OFF SWITCHING ENERGY, Eoff, (J/P) 1.0 0.8 0.6 0.4 0.2 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.030 K/W VCC = 2250V VGE = 15V RG = 15 LS = 180nH Tj = 125C Inductive Load Integrated Over Range of 10% 2.5 2.0 1.5 1.0 0.5 0 VCC = 2250V VGE = 15V RG = 15 LS = 180nH Tj = 125C Inductive Load Integrated Over Range of 10% 0 10-3 10-2 TIME, (s) 10-1 100 0 200 400 600 800 1000 1200 COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TURN-ON SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 0.6 REVERSE RECOVERY ENERGY, Erec, (J/P) COLLECTOR CURRENT, IC, (AMPERES) 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 0 1000 2000 3000 4000 5000 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1500 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0.5 0.4 0.3 0.2 0.1 0 VCC = 2250V VGE = 15V RG = 15 LS = 180nH Tj = 125C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions 1250 1000 750 500 250 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 3000V VGE = 15V RG = 15 LS = 100nH Tj = 125C 4 |
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